Dynamic random access memory device equipped with diferential amplifier for cell plate line

摘要

A memory cell of a dynamic random access memory device is implemented by a series combination of a switching transistor and a storage capacitor connected between a bit line and a cell plate line, and a data bit stored in the storage capacitor produces a first potential difference indicative of the data bit between the bit line and another bit line paired therewith as well as a second potential difference between the cell plate of the storage capacitor and a cell plate line isolated therefrom, wherein a differential amplifier increases the second potential difference upon completion of a sense amplification on the first potential difference, thereby boosting the voltage level at the accumulating electrode of the storage capacitor while the bit lines and the cell plate line is being precharged again.