发明名称 |
Semiconductor static random access memory device with covered driver transistors |
摘要 |
A semiconductor memory device of the present invention includes a memory cell comprising two transfer transistors and two driver transistors in which a nitride film is covered only on these driver transistor areas. The nitride film is formed over source and drain regions and a gate electrode of the driver transistor.
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申请公布号 |
US5468986(A) |
申请公布日期 |
1995.11.21 |
申请号 |
US19940250490 |
申请日期 |
1994.05.27 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
YAMANASHI, MITSUHIRO |
分类号 |
H01L21/8244;H01L27/11;H01L29/78;(IPC1-7):H01L27/02 |
主分类号 |
H01L21/8244 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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