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发明名称
MOS-TRANSISTOR INTEGRATED CIRCUIT OF THIN-FILM SOI STRUCTURE
摘要
申请公布号
JPH07307472(A)
申请公布日期
1995.11.21
申请号
JP19940098734
申请日期
1994.05.12
申请人
NIPPON STEEL CORP
发明人
MASUI SHOICHI
分类号
H01L21/76;H01L27/12;H01L29/78;H01L29/786;(IPC1-7):H01L29/786
主分类号
H01L21/76
代理机构
代理人
主权项
地址
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