| 摘要 |
PURPOSE:To solve the problem such as the roughing of etched surface which is insoluble by fluoric acid etching, by a method wherein the mixing ratio of the mixed solution of etchant of sulfuric acid, potassium dichromate and water, the condition of temperature when the mixed solution is used, and the suitable depth to remove ZnSe and the like are property examined. CONSTITUTION:Pertaining to the blending of an etchant, potassium dichromate of 0.5 to 8.0g is added to the mixed solution of 100cc, which is formed by mixing sulfuric acid of 10 volume ratio or more for water of 100 volume ratio, or sulfuric acid of 100. The temperature of etching is 0 to 70 deg.C, the depth of etching is the same as or less than the thickness of the epitaxially grown layer on a substrate, in concrete, it is about several to ten odds mu By setting the condition of process as above-mentioned, an excellent stripe current constricting structure, an almost circular current diffusion structure, and pretreatment of a substrate can be accomplished, and a suitable blue light emitting semiconductor device can be obtained. |
