| 摘要 |
PURPOSE:To obtain excellent electrical and mechanical contact by a method wherein the contact of the contact layer of the p-side electrode of a semiconductor light emitting device is coated not only on the upper surface but also on the side face, and its cross-section is formed into a three dimensional electrode structure. CONSTITUTION:The deposition area of p-side electrode 9 against a contact layer 7 is increased by forming a p-side electrode 9 not only on the upper surface of the contact layer 7 but also on the side face 7b formed on the contact layer 7 in pi-shaped crosssection, namely, they are, so to speak, formed in a three-dimensional structure. As a result, the deposition area of the p-side electrode 9, against the contact layer 7, is increased. Accordingly, the contact resistance of the contact 7 of the abovementioned p-side electrode 9 is decreased, the working voltage is reduced, the strength of deposition for the contact layer 7 is increased by the formation of pi-shaped curved form with the increase in deposition area of the p-side electrode 9, and the reliability can be improved. |
