SEMICONDUCTOR DEVICE AND ITS MANUFACTURE

摘要

PURPOSE:To provide a VMT in which a transverse propagation mode hardly exists and which uses a genuine quantum wire. CONSTITUTION:A semiconductor device is provided with a GaAs substrate 33 which has a superlattice structure 37 constituted of a delta-doped n-type GaAs layer 34 and of a delta-doped p-type GaAs layer 36 and in which a slope 41 has been formed, with an AlGaAs barrier layer 45 which has been formed on the slope 41 and with a modulation doped HEMT structure 47 which is formed on the AlGaAs barrier layer 45. Then, when a bias is applied to the delta-doped n-type GaAs layer 34 and the delta-doped p-type GaAs layer 36, a quantum wire 65 is induced in an interface 67 between the AlGaAs barrier layer 45 and a GaAs active layer 49 along the end part of the delta-doped n-type GaAs layer 34.