QUANTUM WIRE STRUCTURE AND ITS MANUFACTURE

摘要

PURPOSE:To form a fractional supper lattice layer on a buffer layer in a manner that a group of a blocking layer part and well layer part (both are III-V semiconductor layer) will have a highly accurate step cycle in accordance with the tilt angle from a low-index face of a III-V compound semiconductor substrate body in a facial direction and to make the layer to operate as a uniform quantum wire structure. CONSTITUTION:A quantum wire structure is provided with a III-V compound semiconductor layer 10 that is formed on the surface comprised of a step face 4a of a III-V compound semiconductor layer 4 as a first blocking layer and whose thickness is set to be at most three molecular layer through molecular beam epitaxial growth. In addition, the layer 10 is a buffer layer having a surface comprised of a step face 10a that is made of GaAs having a narrower forbidden band width than that of the layer 4 as the first blocking layer and corresponds to a step face 3a of a III-V compound semiconductor layer 3 of a III-V compound semiconductor substrate 1. Then, a fractional supper lattice layer 5 consisting of a semiconductor layer part 5B as a blocking layer and a semiconductor layer part 5W as a well layer is provided on the step 10a.