发明名称 |
Process for making a semiconductor MOS transistor employing a temporary spacer |
摘要 |
In the method of present invention, an LDD MOSFET is formed without using a side wall spacer as an ion implantation inhibiting layer. The process includes the steps of: forming a first insulating layer, a conductive layer and an auxiliary layer upon a semiconductor substrate, removing relevant portions of the auxiliary layer to form an auxiliary layer pattern such as a gate pattern on the conductive layer; depositing a temporary layer on the auxiliary layer pattern and on the exposed conductive layer, and etching it back to form a temporary layer spacer on the side wall of the auxiliary layer pattern; removing relevant portions of the conductive layer utilizing the auxiliary layer pattern and the temporary layer spacer as a mask, and forming a high concentration first dopant buried layer within the semiconductor substrate; and removing the temporary layer spacer, forming a gate electrode by etching the conductive layer utilizing the auxiliary layer pattern as a mask, and forming a low concentration second dopant buried layer within the semiconductor substrate. Applications to form CMOS devices are also disclosed.
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申请公布号 |
US5468665(A) |
申请公布日期 |
1995.11.21 |
申请号 |
US19950376514 |
申请日期 |
1995.01.23 |
申请人 |
GOLDSTAR ELECTRON CO., LTD. |
发明人 |
LEE, CHANG-JAE;HWANG, HYUNSANG |
分类号 |
H01L21/336;H01L21/8238;H01L29/78;(IPC1-7):H01L21/335;H01L21/823 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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