发明名称 Nonvolatile memory device including multi-ECC circuit
摘要 A nonvolatile memory device containing sub memory arrays and distinct associated peripheral sub array circuits containing error checking and correction circuits that are similarly positioned according to the sub array. The memory device is configured so that a single mask change allows the device to be manufactured as a normal mode device or a page mode device.
申请公布号 US5469450(A) 申请公布日期 1995.11.21
申请号 US19930099331 申请日期 1993.07.30
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 CHO, SUNG-HEE;LEE, HYONG-GON
分类号 G11C17/00;G06F11/10;G11C16/02;G11C16/06;G11C29/00;G11C29/04;G11C29/42;(IPC1-7):G06F11/10 主分类号 G11C17/00
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