| 摘要 |
PURPOSE:To improve various characteristics of a semiconductor laser by a method wherein a III-V group semiconductor is used as an active layer, the clad layer, which pinches the active layer, is used as a I-III or II-VL group semiconductor or an insulator having the dielectric constant smaller than the active layer, and the carriers necessary for laser oscillation are injected in parallel with the direction of lamination. CONSTITUTION:The refractive index of a waveguide layer, consisting of a quantum well active layer and buffer layers 13 and 15, is about 3, and the refractive index of clad layers 12 and 16 of ZnSe0.54Te0.46 is 2.4. At this time, the confinement coefficient of light is about 0.7 when the thickness of the waveguide layer is about 0.3mum, and as the confinement coefficient becomes seven times larger when compared with the ordinary value of 0.1, the threshold gain per layer of quantum well becomes 1/14 of the ordinary 10-layer quantum well laser, and the threshold density of carriers decreases sharply. As carriers are injected from the clad layer on the side face of a quantum well active layer, it receives no influence of the electric characteristics of the upper and the lower clad layers. The carriers can be injected uniformly into all quantum quantum wells irrespective of high quantum barrier. |
