发明名称 |
Control and modification of dopant distribution and activation in polysilicon |
摘要 |
Dopant distribution and activation in polysilicon is controlled by implanting electrically neutral atomic species which accumulate along polysilicon grain boundaries. Exemplary atomic species include noble gases and Group IV elements other than silicon.
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申请公布号 |
US5468974(A) |
申请公布日期 |
1995.11.21 |
申请号 |
US19940249867 |
申请日期 |
1994.05.26 |
申请人 |
LSI LOGIC CORPORATION |
发明人 |
ARONOWITZ, SHELDON;KU, YEN-HUI J.;HO, YU-LAM |
分类号 |
H01L21/265;H01L29/32;(IPC1-7):H01L29/04 |
主分类号 |
H01L21/265 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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