发明名称 |
Method for preparation of silicon nitride gallium diffusion barrier for use in molecular beam epitaxial growth of gallium arsenide |
摘要 |
A technique is described for the preparation of a thin film of a silicon nitride diffusion barrier to gallium on a silicon integrated circuit chip. The technique involves reacting nitrogen and silane in a ratio of 53:1 to 300:1 in a plasma enhanced chemical vapor deposition apparatus. The described technique is of interest for use in the monolithic integration of interconnected GaAs/AlGaAs double heterostructures, modulators and silicon MOSFET structures.
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申请公布号 |
US5468689(A) |
申请公布日期 |
1995.11.21 |
申请号 |
US19930153719 |
申请日期 |
1993.11.16 |
申请人 |
AT&T CORP. |
发明人 |
CUNNINGHAM, JOHN E.;GOOSSEN, KEITH W.;JAN, WILLIAM Y.;WALKER, JAMES A. |
分类号 |
C23C16/50;H01L21/203;H01L21/205;H01L21/318;(IPC1-7):H01L21/02;H01L21/20 |
主分类号 |
C23C16/50 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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