DRAM CELL MANUFACTURING PROCESS

摘要

The method for manufacturing a capacitor for a semiconductor memory device comprises the steps of: depositing a first insulating layer over a conductive layer with a prominence and depression surface and etching back to leave the first insulating layer only at a part of the conductive layer; anisotropic-etching the conductive layer by using the first insulating layer as a mask and forming a second prominence and depression thereover; depositing a second insulating layer over the conductive layer; etching back the second insulating layer to leave the second insulating layer only at a part of the conductive layer; and etching the conductive layer by using the remaining second insulating layer as a mask and forming a third prominence and depression thereover.