System of manufacturing HgI2-based radiation micro- detectors.

摘要

System of manufacturing HgI2-based radiation micro- detectors. The present invention relates to the method of growing single crystals of HgI2 and in sheets with its subsequent preparation in geometry for manufacturing high-performance radiation micro-detectors. These detectors are highly efficient with regard to X-rays and gamma radiation, being capable of being used at ambient temperature with great sensitivity, characterized by a lower limit of detection of 2 keV. Their reduced size gives them a potentially very wide range of applications (nuclear medicine, monitoring radioactive installations, research, etc.). <IMAGE>