摘要 |
<p>An integrated circuit chip has full trench dielectric isolation of each portion of the chip. A heat sink cap (100) is attached to a diamond passivation layer (96) on the substrate front side surface. The passivation layer is a CVD diamond film which provides both electrical insulation and thermal conductivity. In a flip chip version, frontside electrical contacts (174a, 174b) extend through the frontside passivation layer to the heat sink cap. In a surface mount version, vias are etched through the substrate, with surface mount posts (90a, 90g) formed on the vias, to contact the frontside electrical contacts and provide all electrical contacts on the substrate backside surface. The wafer is then scribed into die in both versions without need for further packaging.</p> |