| 摘要 |
<p>Semiconductor lasers (10) utilize strain-compensated multiple quantum wells (20) to increase gain in long wavelength (1.3 and 1.5 microns) devices. The strain-compensated quantum well structures (18) contain a plurality of strained well (20) and barrier (22) layers, where the barrier layers (22) are placed under a strain equal and opposite to that of the well layers (20). As a result, the normal thickness restriction on strained layers is lifted. In addition, the well layers are p-doped to further increase optical gain. Another embodiment uses strain-compensated multiple quantum wells in a grating-coupled laser (100 and 120). Because of the increased gain of the strain-compensated quantum well structure, the grating can made on the surface of the laser with a strong light coupling characteristic, allowing simpler fabrication and shorter length of the laser.</p> |
