CHANNEL ACTIVATING METHOD OF GAAS FIELD EFFECT TRANSISTOR

摘要

The method for activating semi-insulated gallium and arsenic substrates as enhancement and depletion-typed areas by implanting ion thereon at the first time, and activating an N+ area for a contact with source and drain regions by implanting the ion at the second time, comprises the steps of: removing a double insulating film with a heat treatment protecting film, and performing a quick heat treatment during five to twenty seconds at 900 to 925 deg.C.