MAKING METHOD OF GATE ELECTRODE ON THE BURIED CONTACT

摘要

The method for forming a gate electrode over a buried type contact comprises the steps of: depositing a gate oxide layer, a first polysilicon layer and an insulating layer doped with impurity over a semiconductor substrate; sequentially etching the impurity-doped insulating layer, first polysilicon layer and gate oxide layer and exposing a contact region of the semiconductor substrate; flowing the insulating layer by thermal-processing; depositing and thermal-processing a first transfer metal layer over the whole surface of the structure of the first or third step and forming a silicide layer at the upper portion of the contact region; removing the first transfer metal layer over the insulating layer; forming a second polysilicon layer and a second transfer metal layer over the whole surface of the structure of the first step or fifth step; and dry-etching the second transfer metal layer and the second polysilicon layer at the portion except the contact region to remain only at the upper portion of the silicide layer.