| 摘要 |
The method for manufacturing bipolar transistor comprises the steps of: depositing over a low concentration impurity region doped with the impurity of low concentration, a polysilicon doped with impurity of high concentration which has an opposite conductivity type to the impurity doped over the low concentration impurity region to form the polysilicon of a base region and auto doping the impurity of high concentration to the low concentration impurity region to form thin base region; depositing an oxide layer over the polysilicon of the base region and low concentration impurity region and forming an oxide layer side wall at the both sides of the polysilicon of the base region by an anisotropic-etching; forming a polysilicon doped with the impurity of high concentration which has the same conductivity type to the impurity doped over the low concentration impurity region, over the low concentration impurity region at the both sides of the polysilicon of the base region, forming a polysilicon of an emitter region insulated by the oxide layer side wall at one side of the polysilicon of the base region and a polysilicon of a collector region insulated by the oxide layer side wall at the other side thereof, auto doping the impurity of high concentration doped over the polysilicon of the emitter region and collector region to form thin emitter and collector regions.
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