<p>A magnetic field sensor apparatus that comprises an active layer of indium antimonide or indium arsenide supported on an elemental semiconductor substrate. Magnetoresistor sensors of indium antimonide and indium arsenide active layers on silicon and germanium substrate wafers are described. Means are described for providing reduced electric fields and parasitic conduction in the elemental semiconductor substrate. The means includes unique device geometries and buffer layers between the active layers and the substrate wafers.</p>
申请公布号
EP0682266(A1)
申请公布日期
1995.11.15
申请号
EP19950200849
申请日期
1995.04.04
申请人
GENERAL MOTORS CORPORATION
发明人
PARTIN, DALE LEE;HEREMANS, JOSEPH PIERRE;GREEN, LOUIS