发明名称 |
Diamond films with heat-resisting ohmic electrodes and its fabrication method |
摘要 |
A is a heat-resisting ohmic electrode on diamond film, including: a p-type semiconducting diamond film; a boron-doped diamond layer provided on the semiconducting diamond film; and an electrode element made of p-type Si selectively formed on the boron-doped diamond layer; wherein the boron concentration in the boron-doped diamond layer is from 1.0x1019 to 1.8x1023 cm-3, and at least one impurity selected from the group consisting of B, Al and Ga is doped in the electrode element with a concentration from 1.0x1020 to 5.0x1022 cm-3. The ohmic electrode on diamond film is applicable for electronic devices operative at high temperature. |
申请公布号 |
GB2266623(B) |
申请公布日期 |
1995.11.15 |
申请号 |
GB19930008260 |
申请日期 |
1993.04.21 |
申请人 |
KABUSHIKI KAISHA * KOBE SEIKO SHO |
发明人 |
KIMITSUGU * SAITO;KOJI * KOBASHI;KOZO * NISHIMURA;KOICHI * MIYATA |
分类号 |
C30B29/04;H01L21/04;H01L21/28;H01L29/16;H01L29/40;H01L29/45 |
主分类号 |
C30B29/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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