Multilayer gate MOS device.

摘要

A semiconductor device comprises a semiconductor substrate of a first conductivity type, a first conductive layer such as a polysilicon layer (44) formed on the semiconductor substrate using a dopant, of a second conductivity type, a silicon-rich nitride film (48) formed on the first conductive layer, and a second conductive layer (50) such as a refractory metal or metal silicide layer formed on the silicon-rich nitride film, wherein the silicon-rich nitride film inhibits outdiffusion of dopant from the first conductive layer into the second conductive layer, and blocks interdiffusion between the second conductive layer and the first conductive layer.