| 摘要 |
PURPOSE:To prevent taking-in of impurities adsorbed to or contained in the wall surface of a chamber by a method wherein the neighborhood of the interface between an n/i buffer layer and an n-type layer is plasma-treated by the hydrogen gas containing silicon-atom containing gas, which is not substantially deposited, and V-group element containing gas. CONSTITUTION:At least one or more pin structures, formed by laminating an amorphous n-type layer 103 containing silicon atoms, anon-single crystal i-type n/i buffer layer 151, a non-single crystal i-type layer 104, a non-single crystal i-type p/i buffer layer 161 and a non-single crystal p-type layer 105, are superposed on a substrate 190. When such a photovoltaic element as above- mentioned is formed, the vicinity of the interface, where the n/i buffer layer 151 and the n-type layer 103 are brought into contact with each other, is plasma- treated by the silicon-atom containing gas, in the concentration with which it is not deposited, and periodic table V-group element containing gas. For example, the silicon atom containing gas is formed in SiH4, SiF4 and the like, and the content of the hydrogen gas is set at 0.1% or less. |
