发明名称 Random access memory
摘要 A current sensing read arrangement for a static random access memory in which critical nodes in the sensing arrangement are equalised before read-out commences, and in which differential outputs are applied to a gating arrangement which terminates the read-out as soon as a recognisable output signal is obtained, so as to minimise power consumption.
申请公布号 US5467312(A) 申请公布日期 1995.11.14
申请号 US19940221073 申请日期 1994.03.31
申请人 PLESSEY SEMICONDUCTORS LIMITED 发明人 ALBON, RICHARD;WILLIAMS, DAVID
分类号 G11C11/41;G11C11/417;G11C11/419;(IPC1-7):G11C7/00 主分类号 G11C11/41
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