发明名称 |
Random access memory |
摘要 |
A current sensing read arrangement for a static random access memory in which critical nodes in the sensing arrangement are equalised before read-out commences, and in which differential outputs are applied to a gating arrangement which terminates the read-out as soon as a recognisable output signal is obtained, so as to minimise power consumption.
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申请公布号 |
US5467312(A) |
申请公布日期 |
1995.11.14 |
申请号 |
US19940221073 |
申请日期 |
1994.03.31 |
申请人 |
PLESSEY SEMICONDUCTORS LIMITED |
发明人 |
ALBON, RICHARD;WILLIAMS, DAVID |
分类号 |
G11C11/41;G11C11/417;G11C11/419;(IPC1-7):G11C7/00 |
主分类号 |
G11C11/41 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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