| 摘要 |
PURPOSE:To provide an X-ray projection and exposure method high in the transfer accuracy and production efficiency of a pattern and enabling the realization of the long service life of a mask. CONSTITUTION:After diffracting emitted light from an X-ray source by a diffraction grating, only the exposure X-rays of desired wavelength are selectively taken out by a slit, and a mask is irradiated using these X-rays. A synchrotron light source 1 or a laser plasma light source, for instance, is used as the light source. As to the diffraction grating 3, it is desirable that the blaze wavelength is equal to the center wavelength of the exposure X-rays. It is also desirable that the half-width of a filter characteristic obtained by the combination of the diffraction grating 3 and slit 4 is set in a range of one time to twice the half-width of the reflectance wavelength characteristic of the mask 5. |
