DUAL LAYER OF INSULATION AND CAPPING FOR HILLOCK PREVENTION IN METAL LAYER OF THIN FILM STRUCTURE

摘要

PURPOSE: To form film structure a low cost and without pollution, without forming hillock in a metal layer, by covering the metal layer with a first insulating layer at a low temperature by which the metal layer becomes hillock free, and covering it with a second insulating layer. CONSTITUTION: A substrate 52 is covered with a metal layer 52 and it is patterned. The top of the metal layer 54 is covered with a first insulating layer 56. This layer is either SiOx or SiOx Ny overlaid by sputtering or plasma enhanced CVD. In the case that the metal is aluminum, the temperature where the first layer is overlaid is about 150-200 deg.C. Since the first layer being already formed supports the suppression of formation of hillock, the second layer 58 can be overlaid at a higher temperature. That is, the second insulating layer is SiNx being overlaid, using either the sputter coating or plasma or enhanced CVD at 350 deg.C.