发明名称 |
Semiconductor memory device having register groups for writing and reading data |
摘要 |
A semiconductor memory device comprises an array of memory cell units, each of which has a plurality of MOS transistors connected in series and a plurality of information storage capacitors corresponding in number to the MOS transistors and each having its one end connected to the source of a corresponding one of the MOS transistors, and a plurality of register groups each of which is adapted to temporarily store information stored in one of the memory cell units for each column of the array in order to read from and write into each memory cell unit.
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申请公布号 |
US5467303(A) |
申请公布日期 |
1995.11.14 |
申请号 |
US19950380443 |
申请日期 |
1995.01.30 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
HASEGAWA, TAKEHIRO;WATANABE, SHIGEYOSHI;MASUOKA, FUJIO |
分类号 |
G11C11/405;G11C11/401;G11C11/404;G11C11/4096;(IPC1-7):G11C11/24;G11C7/00 |
主分类号 |
G11C11/405 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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