Elektrische Gedächtnisschaltung mit mindestens einem tiefgeätzten Transistor,申请号AT19590000429-传众专利搜索

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发明名称	Elektrische Gedächtnisschaltung mit mindestens einem tiefgeätzten Transistor
摘要
申请公布号	AT210477(B)	申请公布日期	1960.08.10
申请号	AT19590000429	申请日期	1957.08.21
申请人	N. V . PHILIPS' GLOEILAMPENFABRIEKEN	发明人
分类号		主分类号
代理机构		代理人
主权项
地址

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