Semiconductor integrated circuit device including a capacitor and a resistor and fabrication method therefor.

摘要

A semiconductor integrated circuit device includes a capacitor (40) and a resistor (20) in addition to a transistor (30). The capacitor (40) includes a lower electrode (14) made of a first polysilicon layer formed on an insulating layer (2) covering the main surface of a semiconductor substrate (1), a dielectric film (15) formed on the lower electrode and a upper electrode (16) formed on the dielectric layer (15), whereas the resistor includes a resistor layer (24) made of a second polysilicon layer formed on the insulating layer (2). The first polysilicon layer has the same sheet resistance as the second polysilicon layer. <IMAGE>