发明名称 |
High efficiency, high power multiquantum well IMPATT device with optical injection locking |
摘要 |
Multiple quantum wells within an impact avalanche transit time device (IMPATT) utilizing a plurality of gallium arsenide/aluminum gallium arsenide heterojunctions are used to provide a high power, high frequency, high efficiency device operating at 50 GHz and up. The multiple quantum wells defined by the heterojunctions between pairs of gallium arsenide quantum wells and aluminum gallium arsenide barrier layers improves the nonlinearity of the avalanche process within the gallium arsenide quantum wells and reduces the ionization rate saturation limitations. Optical injection locking of the current through the IMPATT device is achieved by irradiating the active layer of the IMPATT device with modulated laser light.
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申请公布号 |
US5466965(A) |
申请公布日期 |
1995.11.14 |
申请号 |
US19920984148 |
申请日期 |
1992.12.02 |
申请人 |
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA |
发明人 |
MENG, CHARLES C.;FETTERMAN, HAROLD R. |
分类号 |
H01L29/864;(IPC1-7):H01L29/90;H01L31/10 |
主分类号 |
H01L29/864 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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