Method for forming a metal wire of a semiconductor device

摘要

The object of the present invention is to prevent the electrical short between the adjacent metal wires by forming metal wires alternately between insulation films and to improve the process margin in the lithography process and the etching process. The present invention alternately forms a plurality of metal wires between the insulation films by manufacturing the photomask for metal wires in two separate pieces to correspond to the photomask for general metal wires for forming a plurality of metal wires which are densely constituted, and by utilizing the two photomasks.