| 摘要 |
A semiconductor device comprising: a semiconductor substrate; a plurality of conductive layers in which impuries are doped in a silicon composing the substrate; a wiring layer formed on the substrate via a first insulating layer and made chiefly of the silicon; a second insulating layer covering a surface of the substrate at an area including the conductive layers and the wiring layer; contact holes communicating respectively with the conductive layers and the wiring layer, the contact holes being formed by removing a part of the second insulating layer; and a multilayer interconnection layer electrically connected with the conductive layers and/or the wiring layer via the contact holes. The multilayer interconnection layer including a conductive silicon layer made chiefly of a polycrystalline silicon and contacting the conductive layers and/or the wiring layer, a barrier metal layer contacting the conductive silicon layer, and a metal wiring layer contacting the barrier metal layer. In the very small contact hole portions of the semiconductor device, the wiring region has a small contact resistance with the conductive region, e.g., the conductive layer formed on the substrate and the foundation wires made chiefly of silicon.
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