发明名称 SEMICONDUCTOR WAFER AND SEMICONDUCTOR DEVICE
摘要 <p>PURPOSE:To prevent the generation of defects, such as a short-circuit between inner leads and a chip and a short-circuit between the inner leads, due to cut scraps when pads are cut including a conductive layer on a scribing area by a method wherein the conductive layer is intermittently formed along the lengthwise direction of the scribing area and the conductive layer is formed in such a way as to have a width smaller than its length in the direction intersecting the lengthwise direction of the area. CONSTITUTION:Pads 33 are provided along the lengthwise direction of a scribing area 2, coupling parts 33B in the centers of the pads are provided and branch parts 33A are intermittently provided on both sides of the pads from these coupling parts 33B. When the branch parts 33A of the pads 33 are cut in their arrangement directions, the width (a) of each branch part 33A is made shorter than the intervals (d) between inner leads 8a and a chip 3. Thereby, as the length of cut scraps 33b of the parts 33A, which are generated by the cutting of the parts 33A, is not formed longer than the dimension narrower than the cut width (a) of the branch parts, the pads do never reach from the side of the chip 3 to the leads 8a and a short-circuit between the leads 8a and the chip 3 and a short-circuit between the leads 8a can be prevented from being generated.</p>
申请公布号 JPH07302773(A) 申请公布日期 1995.11.14
申请号 JP19940117626 申请日期 1994.05.06
申请人 TEXAS INSTR JAPAN LTD 发明人 KIJIMA KAZUHIRO;HATTORI HITOSHI
分类号 H01L21/66;H01L21/301;H01L23/544;(IPC1-7):H01L21/301 主分类号 H01L21/66
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