发明名称 |
Method of manufacturing a semiconductor device having silicon islands |
摘要 |
A semiconductor device such as FET or charge coupled device, having a channel or a charge coupled portion provided in a thin semiconductor layer which is nearly perpendicular to the substrate and to which the necessary electrode such as the gate electrode and the necessary insulating layer are added can maintain the necessary amount of electric current by securing the height of the semiconductor layer and also can have its plane size reduced minutely. Further, the semiconductor memory device using the above semiconductor device is suitable to high integration and has excellent electric characteristics.
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申请公布号 |
US5466621(A) |
申请公布日期 |
1995.11.14 |
申请号 |
US19930141027 |
申请日期 |
1993.10.25 |
申请人 |
HITACHI, LTD. |
发明人 |
HISAMOTO, DAI;KAGA, TORU;KIMURA, SHINICHIRO;MONIWA, MASAHIRO;TANAKA, HARUHIKO;HIRAIWA, ATSUSHI;TAKEDA, EIJI |
分类号 |
H01L21/336;H01L21/339;H01L21/762;H01L21/8238;H01L21/8242;H01L21/8248;H01L21/8249;H01L27/108;H01L27/11;H01L29/10;H01L29/423;H01L29/786;(IPC1-7):H01L21/70;H01L27/00 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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