| 摘要 |
PURPOSE:To improve the stability of operation and lengthen life, and to manufacture the title semiconductor laser easily by arranging a distributed feedback means to a striped shape while the surfaces of a base body on both sides of the distributed feedback means to a plane shape. CONSTITUTION:A P-type AlGaAs clad layer 22, a GaAs active layer 23 and an N-type AlGaAs guide layer 24 are grown on a P-type GaAs substrate in an epitaxial manner is succession. A positive type photo-resist layer 32 is applied, the latent images of a diffraction grating are exposed 33 through a holographic exposure method, and lap exposure 34 is executed to the photo-resist layer 32 through the mask of a striped pattern, and developed, thus forming a plurality of rectangular resist masks 35. The guide layer 24 is etched selectively by a proper etchant to shape rib structure 36 while periodic irregularities, a diffraction grating 25, is formed on the surfaces of the ribs along the progressive direction of beams. Surfaces 24a on both sides of rib structure 36 are formed to a plane shape and etched up to thickness, which does not reach the active layer. |
