| 摘要 |
PURPOSE:To improve close contact between a copper film and an organic insulating film by forming the copper film with an ion plating process on the organic insulating film located on a ceramic substrate. CONSTITUTION:An organic insulating film 2 is formed on a ceramic substrate 3 and after forming a copper film with an ion plating process on the film 2, patterning is performed by photoetching. It is desirable to form the film 2 on the substrate 3. Further, after treating the surface of the film 2 with ion bombardment in an atmosphere of an inactive gas or a weak oxidizing gas, the copper film is formed with the ion plating process on the film 2. Subsequently, patterning is performed by photoetching, and yet, it is desirable that the purity of the copper film is 99.999% or more. The treatment of the film thus improves close contact between the copper film and the organic insulating film as well as the reliability of manufacturing products; besides, residual stress is so small that etching is performed uniformly. |
