发明名称 METHOD OF EVALUATING SUBSTRATE
摘要 PURPOSE:To evaluate an outer layer or a surface of a substrate with lights percolated onto a substrate side from a prism by a method wherein a prism composed of a material having a larger refractive index than the substrate is brought into contact with a surface of this substrate and lights are all reflected by the surface on the side coming into contact with the substrate of this prism. CONSTITUTION:A surface of a silicon substrate 14 is brought into contact with a germanium prism 11 and infrared rays 12 are incident from one inclined surface of the prism. The infrared lights advance in the germanium prism and advance while all reflecting by an upper surface of the prism and a lower surface coming into contact with the silicon substrate 14. A spectrum of infrared rays is acquired by lights 15 emitted from the germanium prism 11 and divided lights of a Fourier transform spectroscope. It is possible to find an absorption amount of infrared rays in an outer layer portion of the silicon substrate 14 from an attenuation amount of a spectrum. Thus, it is possible to evaluate briefly impurities, crystal defects, contamination matters etc., of the outer layer of the substrate and adhere matters of surface of a substrate etc., with nondestruction and high sensitivity.
申请公布号 JPH07297247(A) 申请公布日期 1995.11.10
申请号 JP19940081427 申请日期 1994.04.20
申请人 TOSHIBA CORP 发明人 HOTTA MASAKI;MATSUSHITA YOSHIAKI
分类号 G01N21/27;G01M11/00;H01L21/66;(IPC1-7):H01L21/66 主分类号 G01N21/27
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