| 摘要 |
PURPOSE: To provide a method for flip-chip bonding an integrated circuit chip to a chip carrier. CONSTITUTION: A high melting point composition, e.g. a binary alloy of Pb/Sn, is applied to a contact on a chip, for example, and a low melting point component, e.g. Bi or Sn, is applied to a contact on a chip carrier, for example. The chip and the chip carrier are then heated. Consequently, the low melting point composition, e.g. Bi or Sn, is fused to produce a low melting point alloy of Bi/Sn, for example. The low melting point alloy dissolves the high melting point composition, e.g. Pb/Sn. Consequently, a solder bond of third low melting point composition, e.g. a ternary alloy of Bi/Pb/Sn, is produced. |
