THIN FILM TRANSISTOR AND ITS MANUFACTURE

摘要

PURPOSE:To reduce the overlapping capacitance between a gate electrode and drain electrode by providing an active layer area having the same width as the gate electrode has on a gate insulating layer and the source and drain electrode sections of a metal silicide layer formed in such a state that the electrode sections are connected to both eternal surfaces of the active layer area. CONSTITUTION:A channel protective layer area 14 is formed on a gate electrode 2 provided on an active layer area 13 so that the area 14 has the same width as the electrode 2 has. Then a source electrode section 15 and drain electrode section 16 composed of a metal silicide are connected to both outer walls of the thick part of the active layer area 13. Since the electrodes 15 and 16 are formed just outside of the gate electrode 2 on the electrode 2, the source and drain electrodes 15 and 16 do not overlap the electrode 2 and the overlapping capacitance Cgd between the gate electrode and drain electrode can be reduced.