| 摘要 |
PURPOSE:To provide a photodiode which can obtain a large output current with a small area. CONSTITUTION:A second N-type conductive area 6 having a P-type conductivity section 6 is formed on a P-type semiconductor substrate 2. On this second conductivity section 6, a P-type bite-in section 4 is provided. The bite-in section 4 forms upper and lower P-N junction surfaces 11 and 12 almost parallel to the surface of the substrate 2 in the area 1. Therefore, more P-N junction surfaces can be obtained in the same planar extent and, as a result, a photoelectric conversion device having a large output current can be obtained. |
