| 摘要 |
PURPOSE:To highly suppress the light emitting intensity of a light emitting device by connecting in series light emitting elements and electronic elements having negative resistance. CONSTITUTION:An n-type GaAs layer 302, AlGaAs layer 303, InGaAs layer 304, AlGaAs layer 305, and n-type GaAs layer are successively formed on an n-type GaAs substrate by epitaxial growth so that the layers 302, 303, 304, 305, and 306 can constitute a resonance tunnel diode. The layers 303 and 305 are barrier layers and a quantum level is formed in the 304 between the layers 303 and 305. A current-voltage characteristic having a negative resistance is obtained, because, when a bias voltage is applied across the diode 10, an electric current flows when the energy position of the quantum level coincides with the lower end of the conductive zone of one AlGaAs layer, but, when the bias voltage is higher or lower, no electric current flows. The electrons flowing in the layer 308 from the layer 307 are re-coupled with holes flowing in the layer 308 from the layer 309 and, when the electrons are re-coupled with the holes, light is generated. |
