发明名称 FORMATION OF RESIST PATTERN
摘要 PURPOSE:To improve the cross-sectional profile of a resist pattern by setting a specific relationship between the thickness, the exposing wavelength and the refractive index of an underlying film, i.e., setting a node of a standing wave at the interface. CONSTITUTION:A light reflected on the interface between a substrate 1 and an underlying film 2 interferes with a light reflected on the interface between the underlying film 2 and a chemical amplification resist 3 and produces a standing wave when the thickness of the underlying film 2 is set at a predetermined value. The thickness (d) of the underlying film 2, the exposing wavelength lambda, and the refractive index (n) of the underlying film 2 satisfy a relationship; 2d=2mlambda/(2n), where (m) is a natural number. In other words, the thickness of the underlying film 2 is set such that the node of a standing wave is located on the interface between the underlying film 2 and the chemical amplification resist 3. This method provides a good cross-sectional profile.
申请公布号 JPH07297113(A) 申请公布日期 1995.11.10
申请号 JP19940090861 申请日期 1994.04.28
申请人 SHARP CORP 发明人 MORI SHIGEYASU
分类号 G03F7/004;G03F7/11;H01L21/027;(IPC1-7):H01L21/027 主分类号 G03F7/004
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