| 摘要 |
<p>PURPOSE:To prevent generation of a short circuit defect by providing only the part of a holding capacitance element in contact with the pinhole of one electrode with an insulating means. CONSTITUTION:A holding capacitance electrode 11 which is the one electrode of the holding.capacitance element 1 of an anodically oxidizable metal, such as Al or Ta, a holding capacitance film 12 consisting of Si3N4, Al2O3, etc., and pixel electrodes 13 which are formed continuously with the electrodes for the pixels exclusive of part of the holding capacitance element 1, consist of ITO, etc., and are the other electrode of the holding capacitance element 1 are successively laminated on the surface of a transparent insulating substrate 3 consisting of glass, quartz, etc. The holding capacitance element has the oxidized film 15 formed by anodically oxidizing part of the holding capacitance electrode 11 in contact with the pin hole 14 generated in the holding capacitance film 12. Namely, even if the pinhole 14 is generated in the holding capacitance film 12, the holding capacitance electrode 11 surface existing under the pinhole 14 is anodically oxidized to the oxidized film 15. then, the material of the pixel electrode 13 intrudes into the pinhole 14 and the shorting between both electrodes does not arise even if the pinhole continues to the surface of the holding capacitance electrode.</p> |
