| 摘要 |
PURPOSE:To enhance the quality of a semiconductor integrated circuit device by easing stress concentration and electric field concentration at the corners of the pads and wirings of the semiconductor integrated circuit device. CONSTITUTION:By causing corners 1b formed by the sides 1a-1a of the pads 1 of a semiconductor integrated circuit device to have an arc shape, stress concentration and electric field concentration at the corners are eased. Consequently, it becomes possible to prevent the breakdown of interlayer insulating films at the corners, and to enhance the quality of the semiconductor integrated circuit device. |
