发明名称 THIN FILM TRANSISTOR ARRAY
摘要 <p>PURPOSE:To prevent the drain potential of a transistor(TR) for selecting a signal line from varying when the TR turns ON and OFF. CONSTITUTION:On a substrate, plural parallel signal lines 4 and scanning lines 5 which cross the signal lines 4 while electrically insulated are formed and at the positions where the signal lines 4 and scanning lines 5 cross each other, 1st TRs 6 having their source electrodes connected to the signal lines 4 and their gate electrodes connected to the scanning lines respectively are formed. On the input side of a signal line 4, a 2nd TR 3 has its source electrode connected to a signal input terminal 2, its drain electrode connected to the signal line 4, and its gate electrode inserted into and connected to a horizontal scanning circuit, and the gate electrode and drain electrode of the 2nd TR 3 are connected through an inverting means 11 and a capacity element 12. The thin film transistor array which is thus constituted is used for one substrate of an active matrix type liquid crystal display device.</p>
申请公布号 JPH07295512(A) 申请公布日期 1995.11.10
申请号 JP19940086687 申请日期 1994.04.25
申请人 MATSUSHITA ELECTRON CORP 发明人 KATO TAKEHISA;EMOTO FUMIAKI;SENDA KOJI
分类号 G02F1/136;G02F1/1368;G09G3/36;H01L29/78;H01L29/786;(IPC1-7):G09G3/36 主分类号 G02F1/136
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