| 摘要 |
<p>PURPOSE:To make etching rate of a channel protective film faster than that of a gate insulating layer by adjusting the product of the gas pressure at the time of forming a channel protective film and the interval between discharge electrodes to a specific multiple of the product of the gas pressure at the time of forming the gate insulating layer and the interval between discharge electrodes. CONSTITUTION:When the SiNX film 7 of a gate insulating layer 4 is formed, the gas pressure Pg and interval Dg between discharge electrodes are respectively adjusted to 3.5Torr and 14mm and, when the SiN film of a channel protective layer 6 is formed, the gas pressure Pc and interval Do between electrodes are respectively adjusted to 2.5Torr and 14mm. Thus the product (PcXDc=60Torr.mm) of the gas pressure Pc and interval Dc at the time of forming the SiN film of the channel protective layer 6 is made about 1.2 times (1.1-6 times) larger than that (PgXDg=49Torr.mm) of the gas pressure Pg and interval Dg at the time of forming the SiN film of the gate insulating layer 4. From the relation between the product of the gas pressure and interval of discharge electrodes, the etching rate of the SiNX film 7 can be made faster than that of the SiNX film 4.</p> |
