| 摘要 |
PURPOSE:To provide a photovoltaic element forming method by which a high- performance photovoltaic element can be formed by using such a hydrogen plasma treatment method that impurities adsorbed to or contained in the internal wall surface of a chamber can be prevented substantially and stable discharge can be obtained. CONSTITUTION:In a photovoltaic element forming method in which at least one or more pin structures formed by successively piling up a non-single crystal n-type layer 103 containing silicon atoms, non-single crystal i-type n/i buffer layer 151, non-single crystal i-type layer 104, non-single crystal i-type p/i buffer layer 161, and non-single crystal p-type layer 105 upon another are piled up on a substrate, the vicinity of the interface between the layers 151 and 104 is subjected to plasma treatment performed by using a hydrogen gas mixed with a gas containing silicon atoms in such a degree that the atoms do not accumulate substantially. |
