摘要 |
A method of chucking semiconductor wafers, comprising the steps of forming a silicon elastic layer with high flatness on the surface of a hard substrate having fine through-holes for vacuum chucking, providing fine through-holes in the silicon elastic layer, each through-hole communicating with the fine through-holes of the hard substrate, and holding a semiconductor wafer on the hard substrate by vacuum chucking from the back side of the substrate, so as to hold the semiconductor wafer securely on the substrate only by surface adhesion of the silicon elastic layer during polishing the wafer. This method does not require wax or the like adhesive for holding the semiconductor wafer on the hard surface during the polishing process, and can realize a high-precision and high-quality surface polishing process for the semiconductor wafers. <IMAGE> |
申请人 |
SHIN-ETSU HANDOTAI CO., LTD., TOKIO/TOKYO, JP |
发明人 |
MATSUDA, AKIRA, ANNAKA-SHI, GUNMA-KEN, JP;SHUDO, SHIGEKI, ANNAKA-SHI, GUNMA-KEN, JP;SHIMAMOTO, NOBORU, ANNAKA-SHI, GUNMA-KEN, JP;TANAKA, KOHICHI, TAKASAKI-SHI, GUNMA-KEN, JP;HASHIMOTO, HIROMASA, NISHISHIRAKAWA-GUN, FUKUSHIMA-KEN, JP;SUZUKI, FUMIO, NISHISHIRAKAWA-GUN, FUKUSHIMA-KEN, JP |