| 摘要 |
The present invention makes use of the geometry of the grooves (51) formed in a substrate, to allow a dielectric layer (27) to be deposited with some regions (54) of the grooves having a substantially thinner layer deposited than the top surface of the substrate. These regions (54) of reduced thickness dielectric within the grooves are then prematurely etched by an appropriate chemical (or other) etchant capable of controllably etching away the dielectric layer (27), with the result that in these regions the silicon surface can be exposed and able to be plated by a metallization while the top surface remains protected by the dielectric material. The remaining dielectric material can optionally be required to act as an anti-reflective coating. The invention can be used in making buried contact solar cells. |
