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发明名称
METHOD FOR FORMING P+ TYPE SOURCE/DRAIN OF SHALLOW JUNCTION BY ARGON ION IMPLANTATION
摘要
申请公布号
KR1019950013432(B1)
申请公布日期
1995.11.08
申请号
KR1019920019166
申请日期
1992.10.19
申请人
发明人
分类号
主分类号
代理机构
代理人
主权项
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